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1N3826 TA8003SA UF924DSB STA3350 XR76203 MICRO 26MB120A 332M0
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 NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC5027
APPLICATIONS
High Voltage And High Reliability .
ABSOLUTE MAXIMUM RATINGSTa=25
T stg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.......................................150 PC----Collector Dissipation Tc=25 .................................50W VCBO----Collector-Base Voltage....................................1100V VCEO----Collector-Emitter Voltage.................................800V VEBO----Emitter-Base Voltage.............................................7V IC----Collector CurrentDC.............................................3A ICP----Collector Current Pulse ..........................................10A Ib----Base Current......................................................1.5A
TO-220
1BaseB 2Collector C 3EmitterE
ELECTRICAL CHARACTERISTICSTa=25
Symbol BVCBO BVCEO BVEBO ICBO IEBO Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current 10 8 2 1.5 15 60 V V MHz pF Min 1100 800 7 10 10 40 Typ Max Unit V V V A A Test Conditions IC=1mA, IC=5mA, IE=0 IB=0
IE=1mAIC=0 VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.2A VCE=5V, IC=1A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=10V,IC=0.2A VCB=10V, IE=0f=1MHz
HFE1 DC Current Gain HFE2 DC Current Gain VCE(sat) VBE(sat) fT Cob Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance
hFE Classification
N 10--20 R 15--30 O 20--40
Shantou Huashan Electronic Devices Co.,Ltd.
HC5027


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